A High Voltage Dickson Charge Pump in SOI CMOS
نویسندگان
چکیده
An improved charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. An increase in voltage pumping gain for a silicon-on-insulator (SOI) Dickson charge pump is demonstrated when compared with a traditional bulk CMOS Dickson charge pump. A 6-stage Dickson charge pump was designed to produce a 20 V output from a 3.3 V supply, using a 4 MHz, two-phase non-overlapping clock signal driving the charge pump. The design was fabricated in a 0.35 μm partially depleted SOI CMOS process. An efficiency of 72% is achieved at a load current of approximately 20 μA.
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